Hi Colleagues:
Date: 08/11/2003

I need to process edge grinding, grinding and polishing (CMP) on SOI Substrates
with buried cavities.
Diameter of Substrates is 100 mm.
Handle has a thickness of 525+/-15 µm, DSP, BOX 600+/-60 nm, with a 3 µm deep
etched adjustment groove.
Device layer has been bonded under vacuum (about 10E-3 mbar), that means the
membran will be bowed toward inside the cavities. Device thickness/Initial is
300+/-15 µm. Final device thickness should be 50+/-0.5 µm, polishing prime with
final polish because Device-Surface has to be bondable again, (Surface roughness
<5 Angstrom).
Struckturing of buried cavities:
Depth: 50+/-5 µm
Extensions: c. 1500 µm < w(Cavity) < c. 3000 µm
Pitch: Deltaw (Cavity) > c. 3500 µm

Will provide more details after contacting.

Thanks and best regards,

Marcus Siegert