Marcus,

Isonics Corporation, a local SOI wafer manufacturer located in Vacouver WA not
only produces 4"-12" SOI but also offers such services as you are requesting.
Please contact Renie Duvall 360-885-9310 x 203 for further information.

-------Original Message-------
From: Marcus Siegert 
Sent: 08/11/03 03:40 AM
To: mems-talk 
Subject: [mems-talk] CMP on SOI Substrate with buried cavities (BUCA)

>
> Hi Colleagues:
Date: 08/11/2003

I need to process edge grinding, grinding and polishing (CMP) on SOI
Substrates with buried cavities.
Diameter of Substrates is 100 mm.
Handle has a thickness of 525+/-15 µm, DSP, BOX 600+/-60 nm, with a 3 µm
deep etched adjustment groove.
Device layer has been bonded under vacuum (about 10E-3 mbar), that means
the membran will be bowed toward inside the cavities. Device
thickness/Initial is 300+/-15 µm. Final device thickness should be 50+/-0.5
µm, polishing
prime with final polish because Device-Surface has to be bondable again,
(Surface roughness <5 Angstrom).
Struckturing of buried cavities:
Depth: 50+/-5 µm
Extensions: c. 1500 µm < w(Cavity) < c. 3000 µm
Pitch: Deltaw (Cavity) > c. 3500 µm

Will provide more details after contacting.

Thanks and best regards,

Marcus Siegert
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>

1-360-263-8011