Ken,

Here is an article from Virginia Semiconductor that would serve as a good
reference, I think.
http://www.virginiasemi.com/pdf/Basic%20Mechanical%20and%20Thermal%20Propert
ies%20of%20Silicon.pdf

Regards,

Mike Barger

-----Original Message-----
From: mems-talk-bounces+mjbarger=safeplace.net@memsnet.org
[mailto:mems-talk-bounces+mjbarger=safeplace.net@memsnet.org]On Behalf
Of Kenneth Smith
Sent: Thursday, August 28, 2003 6:42 PM
To: General MEMS discussion
Subject: [mems-talk] Thermal coefficient of expansion on SI vs
orientation


Thermal coefficient of expansion on SI vs orientation

Might anyone know if there are any different Coefficients of expansion
on silicon for 1-0-0 , versus 1-1-1 versus 1-1-0 ? and does resistivity
or dopant have a play in this at all ?

Regards,.
Ken
--


Kmbh Associates
47 Rocket Circle
Rancho Cordova, CA 95742  U  S  A
510-714-5055 Efax- 510 217 4421 or 561 658 6136

High Purity Float Zone and Specialty CZ Silicon  for Power, IR and
Mirror Optics, Optoelectronics, MEMS, SOI, and other Semiconductor
applications. Service in SOI, Polishing SSP and DSP.
Quartz, Glass, Pyrex and Borofloat Wafer Supply. Anodic Bonding. SOG, SOS.



_______________________________________________
MEMS-talk@memsnet.org mailing list: to unsubscribe or change your list
options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk
Hosted by the MEMS Exchange, providers of MEMS processing services.
Visit us at http://www.memsnet.org/