Hi MEMS workers,

I usually use a TiN diffusion barrier against Ni diffusion into TiW/Mo
electrodes, this TiN layer is deposited by a lift-off step.
Nevertheless, I'd like to use this material in a continous layer, but it
seems that by increasing the  TiN dot size (few µm and more), bubble
appears at the surface, coming certainly from a N2 degassing. The
highest temperature during the process is 700°C/10min.
Does anybody know a  way to prevent from this bubbles or an other
conductive diffusion barrier against Ni?
Thanks in advance for your help.

Laurent.