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MEMSnet Home: MEMS-Talk: High Selectivity for GaAs over AlAs for Wet ChemicalEtching
High Selectivity for GaAs over AlAs for Wet Chemical Etching
2003-12-12
Sai Raghav Parasa
High Selectivity for GaAs over AlAs for Wet ChemicalEtching
2003-12-14
Oray Orkun Cellek
2003-12-14
Sai Raghav Parasa
High Selectivity for GaAs over AlAs for Wet ChemicalEtching
Oray Orkun Cellek
2003-12-14
Dear Parasa,

As far as I know :
NH4OH ,
Citric Acid, and
Succinic Acid based solutions should(?) work.

Below references are mostly about GaAs on Al(x)Ga(1-x)As, but I guess it
helps.

References :
R.P. Ribas, Materials Science and Engineering B51 1998 p.267
K. Hjort, J.Micromech. Microeng. , 6(1996), p. 370
Eun-A Moon et. al. JAP, vol. 84 no.7 1998, p. 3933

Good luck,

Oray Orkun Cellek
Research Assistant, Ph. D. Student
Electrical & Electronics Engineering Department
Middle East Technical University
06531 Ankara
Turkey
Tel : +90 312 210 4579
Fax : +90 312 210 1261
e-mail : [email protected]


----- Original Message -----
From: "Sai Raghav Parasa" 
To: 
Sent: Friday, December 12, 2003 2:58 AM
Subject: [mems-talk] High Selectivity for GaAs over AlAs for Wet
ChemicalEtching


> Hi all,
>
> Can you give 3 best etchants which have high selectivity for GaAs over
AlAs for Wet Chemical Etching?
>
> The etchant should best etch GaAs but should not attack AlAs.
>
> Thanks,
> Bye,
> Parasa,
> University of Kassel, Germany.
>
>
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