Michael,

Power and even more, Pressure, plays the biggest roll in reflected power.  Not
knowing what RIE you are using makes it hard to help with your problem.  You may
want to try using the lowest pressure that gives you your desired etch profile
and then play with the power.  Most systems RF matchboxes are happy if you stay
under 10 watts reflected.  Going much higher may cause over heating and power
supply failure.

Brent

Michael L wrote:

> Hello,
>
> I am trying to isotropically etch grooves (20 um wide; 10-20 um deep) in Si
> using an RIE. I am getting high reflected powers whenever I deviate from the
> standard (anisotropic) Si etch recipe. Sometimes, the value starts off low
> but then reaches 10% of the forward power, at which point the system cuts
> off automatically. Would anyone have any information (or know where I can
> get some information) on the main factors that affect the reflected power?
>
> Any information would be useful.
>
> Many thanks,
>
> Michael
>
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