Dear all,

I'm doing a PhD on Schottky diode for Terahertz applications. I'm using 1
micron anode of W (tungsten)on a doped GaAs (3.310^17/cm^-3). The tungsten
is deposited using a Magnetron sputtering source at 5mW and 10^-3mBarr. The
diode are then anneal to decrease ideality and restore the deffects due to W
sputtering.

My problem is the series resistance of my devices are around 30 Ohm for 1
micron diameter anode, and 15 Ohm for 20 micron diam anode... Those series
resistance are too high to be use at high frequency...
Does anybody have any experience on Magnetron sputtering of tungsten and
think that I could have reach what is acheveable with those kind of method.
Or on how to decrease this series resistance down to 5 or 10 Ohm??

Thanks in advance for your help

Jean-Marc  ROLLIN
Physics department University of Bath
E-mail: pypjr@bath.ac.uk