Giovanni,
         I do not know of an easy, safe dry etch gas that will eat Tin Oxide.  I
would suggest you think about a lift off approach.  this would require no
dangerous acidic gas plasma etches.  The resolution using lift off has to be
seen to be believed.  My company manufactures image reversal lift off equipment.
When Cray research were producing the super computer, they used multiple
reversal units for 0.1 micron metal lines.  Bill Moffat

-----Original Message-----
From: Giovanni Morelli [mailto:flash2@katamail.com]
Sent: Thursday, February 05, 2004 1:15 AM
To: mems-talk@memsnet.org
Subject: [mems-talk] HELP: Sputtered Tin oxide dry etching


Dear all,

I would appreciate if someone can help me about gas mixture composition
 about dry etching of sputtered tin oxide films on SiO2, with RIE or ICP,
 possibly with medium-high selectivity vs silicon dioxide.

 Thanks in advance to All

 Dr. Giovanni Morelli




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