It depends on the type of system - cathode size for power density, pressure,
target-substrate spacing. If it was a standard type system (Applied, Veeco,
Trikon, etc.) then the target would be approx 12" in diameter or so, and if the
pressure was around 2 to 4 mT then the rate is probably just over 1um per
minute (i would guess 1.2ums/min) - the temperature is most likely reaching over
170C with no aided cooling, maybe 230 or so - increasing the pressure would
bring it down but at those rates I would expect it to get pretty warm.

David Metacarpa
Veeco
1 Terminal Drive
Plainview, NY 11803

Could anybody comment what could be the wafer surface temperature during
following sputter deposition?
Al deposition, 10000W, 150sccm Ar flow, 12min deposition time
Any comments should be appreciated. Regards,
Cheol Han
Sr. Packaging Engineer
Packaging Technology Group
National Semiconductor
3707 Tahoe Way
Mail Stop 19-100
Santa Clara, CA 95052-8090
Tel: 408-721-7362
Fax: 408-746-2007