Dear all,

We are carrying out some experiments involving patterning
the surface of a 'compound semiconductor' material
on a wafer (backface is polished Si)
using 'THE LIFT-OFF TECHNIQUE'.

Material is e-beam deposited onto pattern resist.

We are finding that 'unwanted' material' is clinging onto the
back of the silicon polished face after lift-off.

Any suggestions about how to minimise this hydrophilic
effect?

regards

philip lau


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