I’m looking to optimize a low stress silicon nitride process for a film 1 to
2 µm thick, residual tensile stress of 50MPa with no or low pinhole density.
Wafer sizes are 100 to 200 mm.  Are there any trade-offs between stress and
pinhole density for any given DCS:NH3 ratios, boat position, temp, pressure
or total gas flow?



Thanks,



Anthony Marrs

Intellite