Assuming you are using a positive resist for lift-off, coat the back
with a negative resist.
-Mike
>>> [email protected] 2/12/2004 4:34:39 AM >>>
Dear all,
We are carrying out some experiments involving patterning
the surface of a 'compound semiconductor' material
on a wafer (backface is polished Si)
using 'THE LIFT-OFF TECHNIQUE'.
Material is e-beam deposited onto pattern resist.
We are finding that 'unwanted' material' is clinging onto the
back of the silicon polished face after lift-off.
Any suggestions about how to minimise this hydrophilic
effect?
regards
philip lau
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