Hello,

I was wondering it is possible to have anisotropic or quasi-anisotropic
etching with plasma etcher (not RIE). Our system has process pressure 0.2 ?
1 mbar and 40kHz/1000W power supply. Spacing between planar electrodes are
3 cm. I would be etching SiO2 and SiN layers with CF4/O2 or CHF3/O2
mixtures.

Best regards
Jukka Viheriala