This is generally not possible because it is the difference in
temperature between room temp and the growth temp that leads to the
stress through thermal expansion (contraction in this case) mismatch.
To get low-stress oxide, you must grow (deposit mostly) the film at
lower temperatures and then NOT anneal.  Addition of other materials
would only help in so far as that addition resulted in less pure oxide
in the film.


Zhimin J Yao wrote:

>Hello,
>
>Can anyone grow thermal oxide with a very low compressive stress (<10 MPa)
>or tensile stress?  I need about 1 um of SiO2 on 4 inch Si wafers.  It is
>OK if H2 or some other elements needed to be introduced into the film.
>
>Any information leads to finding a vendor is greatly appreciated.
>
>Zhimin
>
>
>