Hi
Have you  done  a hard beck of your photoresist? 5 min at 150°C)
(because bhf etch photoresist witho any hard beck.
Aluminium does not usually resist to bhf.

-----Message d'origine-----
De : saroj kumari rathore [mailto:[email protected]]
Envoyé : mercredi 3 mars 2004 05:54
À : [email protected]
Objet : [mems-talk] Etchant of oxide in present of Aluminium as mask


Hi!!! All

I want help of urs.I am making cantilever and want to study properties of it
by applying potential accross it.
For these i m taking P- P+ wafer means i m taking P- at from side and
backside is P+ which I want to use as ecth stop while ecthing of P- for
freeing beams.
First of all I grew oxide on P- and over that i did Aluminium
deposition.Than I m doing lithography for getting beams pattern on
Aluminuim.This  oxide and Aluminium both  will work as mask while removing
oxide except beam area.So after removal of oxide silcon will exposed and
there will left some beams pattern having oxide overthere will be Aluminium
.Metal deposition i m doing so that i can apply force and can study its
behavior.
After getting patterns on Aluminium film i m able to etch Alumium .
But my problem begins now As I wanted to remove oxide so that my Silicon can
be exposed and Aluminium should be there .
As first i use BHF it was attacking photoresist and than Alumium was also
ecthed out .I have tried after changing ratio of ammonium floride and Hf.But
still it doesn't solve.
So I need ur help if any one can help me.
Hope for the prompt reply.
Saroj
Physics Dept
IISC ,Bangalore






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