All:
        I am developing an optical device which needs to have metallization
before
a final 800C diffusion (Implant activation)step. I have tried Tungsten
silicide, which failed for Tungsten diffused into silicon and killed
lifetime. Do you have any thinking of a metallization system can withstand
800C in O2 for 30 min without damaging the lattice of silicon?
        Thanks in advance.

Hong Wu