Dear Isa,
You can use sputtered Tungsten as mask for etching
SiO2 in RIE. We normally etch 3µm oxide for about 80
minutes in CHF3 plasma with 100W input power and 4.5Pa
pressure(For leybold Heraeus). You have to find the
suitable parameters for your machine.
Since u r etching 10 µm, you have to be careful enough
to cool the electrodes.(0 to 5 degrees). I feel that
instead of using RIE, you can better try to etch in
ammonium flouride or HF.
Good luck
regards,
Venkat
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