Igor:
        SiO2 grow out of Polysilicon is widely used in semiconductor device,
especially used in flash memory for inter-poly dielectric. The growth rate
largely depend on doping level, grain structure, surface roughness. There is
no formular to cover this multi-dimensional growth mechanism. The
measurement of this oxide is tricky too. Ellipsometer like Rudolph can give
some relative accurate number based on the model they put into computer, but
may not the poly you actually have. C-V might be the best way but poly
depletion needs to be considered, if the SiO2 is less than 50 Ang thick. We
used to do both C-V and Ellipsomtry to come up a closer number.

Hong Wu

-----Original Message-----
From: [email protected]
[mailto:[email protected]]On Behalf Of Igor
Paprotny
Sent: 2004Äê3ÔÂ16ÈÕ 8:54
To: [email protected]
Subject: [mems-talk] oxidation of poly-crystal silicon


Dear Colleagues,

I am attempting to thermally grow SiO2 on a layer of deposited (LPCVD)
poly-silicon and experiencing a growth rate much higher than that of single
crystal si. Further more, initial results suggest a non-linearity in the
diffusion factor with respect to the temperature. I am also concerned with
potential defects resulting from trenches grown between grain boundaries -
seem to be loosing conductance in electrodes fast. I do not have enough
specimens to fully caracterise this, can anybody help or point me in the
direction of a useful reference?

Thank you,

Igor Paprotny
microrobotics group
Dartmouth College

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