Igor:
        One more thing for this poly oxide is it's leaky. The grain size of the
poly plays a key role on this for high field at the tip of the grain. Two
things can be done to reduce this: 1. Deposit poly at 550C, this poly is
amorphous poly and grain size will grow very large after oxidation. 2. Use
Poly oxide-Nitride-oxide (called ONO) sandwich, like the one in flash memory
between two poly silicon gates (Floating gate and control gate).

Hong Wu

-----Original Message-----
From: mems-talk-bounces+hwu=semicoa.com@memsnet.org
[mailto:mems-talk-bounces+hwu=semicoa.com@memsnet.org]On Behalf Of Igor
Paprotny
Sent: 2004Äê3ÔÂ16ÈÕ 8:54
To: mems-talk@memsnet.org
Subject: [mems-talk] oxidation of poly-crystal silicon


Dear Colleagues,

I am attempting to thermally grow SiO2 on a layer of deposited (LPCVD)
poly-silicon and experiencing a growth rate much higher than that of single
crystal si. Further more, initial results suggest a non-linearity in the
diffusion factor with respect to the temperature. I am also concerned with
potential defects resulting from trenches grown between grain boundaries -
seem to be loosing conductance in electrodes fast. I do not have enough
specimens to fully caracterise this, can anybody help or point me in the
direction of a useful reference?

Thank you,

Igor Paprotny
microrobotics group
Dartmouth College

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