Dear all,

There is a critical flaw on devices I worked out recently.
A possible explanation for it is the complete etching of 1.8um of PSG (6%P)
during a RCA (15s in HF(49%):H2O 1:10 at 20°C).

Is this hypothesis sensible ?

Thank you,


paul


Paul VESCOVO
Laboratoire de Mécanique Appliquée R. Chaléat
24 rue de l'Epitaphe
25000 Besançon
FRANCE
tél : 03 81 66 60 16
fax : 03 81 66 67 00