Hi All,

I need to dry etch a SiO2 sacrificial layer using an insulator as a mask. Does
anyone know of a dry process to etch ion-milled silicon dioxide isotropically
that has a selectivity of 10:1 over evaporated Aluminum oxide?
As a second option I could change the material of the sacrificial layer as long
as this layer and the mask are both insulators.
Thanks for any information
------------------------

Diego Krapf

Delft University of Technology
Department of NanoScience
The Netherlands

phone (office) +31 - 15 - 278 1175