Hi Mr. Doms
We use S1813 for layers up to 2.4 micron and AZ4562 for layers up to 10 microns.
Post backe at 80°C for about 3 Min on hot plate.
10 micron AZ is OK for a wafer through etch about 500microns.

Greetings
Stefan Blunier

-----Original Message-----
From: [email protected] [mailto:mems-talk-
[email protected]] On Behalf Of Marco Doms
Sent: Freitag, 26. März 2004 13:26
To: [email protected]
Subject: [mems-talk] Photoresist for ASE/AOE-Process


As we just got a STS-Cluster Tool for the ASE (Advanced Silicon Etch) and AOE
(Advanced Oxide Etch) Processes, we are looking for a photoresist as masking
material.
We will probably need different resists for different etch-depths and
different feature sizes.
Does anyone have any experience with different resists for these processes or
can anyone recommend one?

Marco

--

Dipl.-Ing. Marco Doms

Wissenschaftlicher Mitarbeiter
Arbeitsbereich Mikrosystemtechnik 4-07
Technische Universität Hamburg-Harburg

Eissendorfer Str. 42
21073 Hamburg


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