Hi all,

                  I am looking for a supplier for low temperature Gallium
arsenide.

                   I have the layer structure drawn for you right below which
should answer all your questions.











i-GaAs
1.0µm

Growth Temperature = Approximately 250 ºC

Anneal 500 ºC, 30 min



Our Main requirement is that the carrier life time should be less than 300fsec





i-GaAs
1000Å

3” Semi insulating High Resistivity GaAs Substrate

Resistivity > 5 Mega ohm-cm

400 – 600 µm thick



Thanks



sharmila



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