Dear all:

I would like to find out a RIE recipe which performs a selective etching between
nitride and silicon.
I only know that CHF3 is one of the suitable etching gas.
Does anybody know the recipe, including gas types, flow rate, power, pressure,
and etching rate?
The RIE facility here only provides SF6, CF4, O2, N2, CHF3, etc.
The max power is 300W.
Please give me some advice if possible.
I really appreciate it.

Yi Chun

Dept. of Power Mechanical Engineering, National Tsing Hua University, Taiwan.