Your samples are in serious trouble.  You will need to use a different
resist in the future, try S1813 if you are
not etching more than a micron worth of the Au-Cu.

The highest temp we've run NMP to remove cross-linked 5214 was 72 degrees,
even then the resist does not fully come off.
You could try thermal shock by freezing the sample first then going directly
into the 72-degree NMP, but you might destroy the sample along with removing
the unwanted resist.

- Justin





-----Original Message-----
From: Robert Dean [mailto:[email protected]]
Sent: Thursday, June 17, 2004 10:33 AM
To: General MEMS discussion
Subject: [mems-talk] Photoresist removal after ion milling


Hello,

We are ion milling a thin layer of Au/Cu on a polymeric substrate, while
using photoresist (AZ5124EIR) as the etch mask.  The ion milling works very
well for etching the Au and Cu.  However, the process results in
crosslinking of the photoresist where we cannot remove it from the
remaining Au/Cu traces on the substrate, even through heated NMP based
stripper baths for 20 hours.  Unfortunately, ashing would damage the
polymeric substrate.  Does anyone have a suggestion on how to remove the
remaining photoresist?

Sincerely,

Robert Dean
Auburn University


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