HNA silicon etching : doping selectivity Do anyone has any information
about the etching selectivity of HNA between doped and undoped silicon. I
observed quite high selectivity, but I have difficulties to reproduce the
etching and to start the etching.The mixture used is HF/HNO3/CH3COOH in
proportion of 1:3:8. The solution has to be activated by dipping an old
silicon wafer for two minutes in the solution or by adding 1gr/l. of Si
powder. The etch rate is not constant over time, it depends of the age of
the solution. Has anyone more experience with it?


Rémy Charavel Doctorant
Université catholique de Louvain
Electrical Engineering Department
Microwave Laboratory
Place du Levant, 3, Maxwell Building
B-1348 Louvain-la-Neuve, BELGIUM
Phone: +32.10.47.80.96  Fax: +32.10.47.87.05
E-mail: charavel@emic.ucl.ac.be