We have used a bilayer photoresist process to liftoff 0.5 micron thick
dc magnetron sputtered niobium films. There is some flagging along the
edges, but it does work.

We use an underlayer of LOR5A (Microchem Corp) spun at 2000 rpm and
cured at 130-150 deg. C for 3-5 min, topped by an imaging photoresist
(Shipley 510LA). The LOR is not photosensitive but just washes away
during development of the imaging resist and creates a well-defined
undercut. the thickness of the underlayer and amount of undercut are
controlled by the LOR formulation.

Jim

On Sep 20, 2004, at 2:09 PM, Mukti M Rana wrote:

> Hi
> I am trying to lift off sputtered film of SiGeO having ~4000 Angstrom
> thickness. Can someone tell me the correct procedure to do it? Thank
> you.
>
> Mukti M Rana
> PhD. Student in Electrical Engineering
> The University of Texas at Arlington
> Room # 208, Nano Fab Center
> 500 Cooper St. , Box 19072
> Arlington, TX 76019, USA
> Tel: (817) 272-1265 (Office)
>        (817) 723-1090 (Cell)
-Jim Beall
303-497-5989
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