Dear all:

I'm trying to make schottky contact on n-type Si by evaporating thin Pt
layer followed by thick Au layer and then liftoff.  The metal patens will be
on both Si (active region) and oxide (isolation region).  However, I found
the adhesion between Pt and Si is ok but it's relatively poor between Pt and
oxide. Does anyone has any suggestion on enhancing the adhesion without
introduce an extra layer between Pt and Si?  Any suggestion is highly
appreciate.

Hao-Chih Yuan
Research Assistant
Dep. of Electrical & Computer Engineering
University of Wisconsin - Madison
1415 Engineering Drive, 3557EH,
Madison, WI, 53706
TEL: (608)262-1648
email: [email protected]