Hi Sampo,

   A phosphoric acid etch (85%) at 160C will etch nitride at 28 A/min will
leaving bulk silicon and undoped poly untouched.

Phillipe Tabada

>From: "Sampo Tuukkanen" 
>Reply-To: General MEMS discussion 
>To: "MemsTalk" 
>Subject: [mems-talk] Wet etching of silicon nitride?
>Date: Thu, 23 Sep 2004 18:11:55 +0300
>
>Hi,
>
>I would like to wet etch Si3N4 (LPCVD) to prevent the damages of silicon
>surface during RIE.
>BHF seems to be quite slow to that.
>
>
>Best regards,
>
>Sampo Tuukkanen, NanoScience Center, Jyväskylä.
>
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