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MEMSnet Home: MEMS-Talk: TiN vs TiW diffusion barrier
TiN vs TiW diffusion barrier
2004-10-19
Thomas Rocco Tsao
2004-10-23
Brad Cantos
TiN vs TiW diffusion barrier
Brad Cantos
2004-10-23
Tom,
TiW is a very easy material to use.  I have been using it in various
structures for 15 or more years.  It is easily etched in H2O2, either at
room temperature or slightly elevated (35šC) to enhance the etch rate.  I
have never seen any issues with etchability as long as it is deposited in a
clean and oxygen-free system.

In response to some other recent posts, it can also be used to enhance
adhesion of gold used as plating seed layers.

I may be able to answer questions you have regarding its use as a barrier if
you email me directly with specifics.

Brad Cantos

On 10/19/04 3:32 PM, "Thomas Rocco Tsao"  wrote:

>
> As a follow-up to my earlier post on TiN diffusion barriers, I have been
> told by one person that TiW is more often used.
>
> Can anybody comment on their experience w/ TiW as a diffusion barrier,
> esp how it compares with TiN?
>
> Searching the archives, I can see that basic H2O2 (potentially combined
> with EDTA) can be used to etch TiW, but that sometimes, it doesn't work
> (i.e. may be some subleties involved).  Does anybody have any personal
> experience with etching TiW?
>
> Thanks in advance.
>
> -Tom
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