Hi!
To etch the poly-Si (both intrinsic and n+) we use a CF4/O2 plasma etching,
to get good anisotropy and selectivity with an underlying SiO2 layer.

Ing. Paolo Tassini
Sezione MAT-NANO
ENEA Centro Ricerche Portici
Via Vecchio Macello, s.n.c.
80055    Portici    (NA)    Italy
tel. +39 081 7723289
fax +39 081 7723344
e-mail paolo.tassini@portici.enea.it




-----Messaggio Originale-----
Da: "Guo X Mr (PG/R - Electronic Eng)" 
A: "mems-talk" 
Data invio: lunedì 25 ottobre 2004 18.18
Oggetto: [mems-talk] a-Si etching


> dear all,
>
> I have a sample with a layer of 100nm a-Si (n+) covering 200nm Si3N4.
After laser anealing (may be poly-Si now), I want to etch it to form some
islands. Could you tell what eching processes are good for this?
>
>
> Thanks
>
> X. Guo
>
> University of Surrey, UK
> _______________________________________________
> MEMS-talk@memsnet.org mailing list: to unsubscribe or change your list
> options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk
> Hosted by the MEMS Exchange, providers of MEMS processing services.
> Visit us at http://www.memsnet.org/
>
>
> _______________________________________
> MAIL SCANSIONATA DA ANTIVIRUS GATEWAY02
> (Inbound)
> _______________________________________
>