Vivek,

        Cl2/BCl3 should be the common gas mixture for Al RIE. At the end
of the process, you may remove BCl3, then it will stop at your Al2O3
layer. But you need load-lock system to run chlorine-based plasma :-(


Yours sincerely,

Isaac Chan

Ph.D. Candidate
Dept. Electrical & Computer Engineering
University of Waterloo
200 University Ave. W
Waterloo, Ontario, N2L 3G1, Canada
Tel: (519) 888-4567, ext. 6014
[email protected]
http://www.ece.uwaterloo.ca/~a-sidic
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My experience is on a-Si:H TFT design and semiconductor processing:
http://resumes.hotjobs.com/iwchan2004/processengineer6yr
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On Tue, 26 Oct 2004 [email protected] wrote:

> Hi Vivek,
>
> I have found that Al acts as an etch stop for SF6 RIE etch.
> I guess that it should behave in a similar fashion for CHF3
> gas in the RIE. You might want to try wet etching of Al
> instead of RIE if that is permissible by your process.
>
> Anupama
>
>  Hey all,
> >
> > I have a pattern on an aluminium-Al2O3 wafer  (array of
> > holes of 50 microns). I want to etch out the aluminum that
> > has been exposed by the pattern.  The layer of aluminium
> > on the aluminum oxide is about 700 microns.  Does anyone
> > know what is the best photoresist that will last in the
> > RIE and how long should I leave the chips in the RIE to
> > etch out approximately 700 microns?   Also if anyone knows
> > the chemistry that I should use in the RIE to efficiently
> > etch the aluminum and not the Al2O3 would be very helpful.
> >
> > Thank you everyone in advance.  You guys have been great
> > help.
> >
> > Vivek
> > _______________________________________________
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>
> Anupama V. Govindarajan
> PhD Student
> EE MEMS laboratory
> Department of Electrical Engineering
> University of Washington
> Campus Box 352500, Seattle WA 98195
> Phone: (206)-221-5340
> email: [email protected]
> _______________________________________________
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> options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk
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> Visit us at http://www.memsnet.org/
>