It's unlikely he'll get the parameters he wants by wet etching 700 micron
thick aluminum.  I'd look at Cl2-based RIE (or BCl3, etc).


Hi Vivek,

I have found that Al acts as an etch stop for SF6 RIE etch.
I guess that it should behave in a similar fashion for CHF3
gas in the RIE. You might want to try wet etching of Al
instead of RIE if that is permissible by your process.

Anupama

 Hey all,
>
> I have a pattern on an aluminium-Al2O3 wafer  (array of
> holes of 50 microns). I want to etch out the aluminum that
> has been exposed by the pattern.  The layer of aluminium
> on the aluminum oxide is about 700 microns.  Does anyone
> know what is the best photoresist that will last in the
> RIE and how long should I leave the chips in the RIE to
> etch out approximately 700 microns?   Also if anyone knows
> the chemistry that I should use in the RIE to efficiently
> etch the aluminum and not the Al2O3 would be very helpful.
>
> Thank you everyone in advance.  You guys have been great
> help.
>
> Vivek
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Anupama V. Govindarajan
PhD Student
EE MEMS laboratory
Department of Electrical Engineering
University of Washington
Campus Box 352500, Seattle WA 98195
Phone: (206)-221-5340
email: anupama@ee.washington.edu
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