Amol,
     If you have taken all the usual precautions for a clean deposition,
possible problem area may be the inclusion of minute amounts of sodium.  If this
is suspected a very old ploy is to include a small amount of HCL in the
oxidation to imobilize the sodium.  If it is sodium you may be able to anneal it
out with an over 500 degree anneal with a getter of HCL to treat the sodium.

-----Original Message-----
From: mems-talk-bounces@memsnet.org
[mailto:mems-talk-bounces@memsnet.org]On Behalf Of amol kumar singh
Sent: Monday, November 08, 2004 8:43 AM
To: MEMS-talk@memsnet.org
Subject: [mems-talk] quality of gate oxide (SiO2)


Dear All,

I have measured the dieletric constant of my thermally grown gate oxide on Si as
2.7 from CV measurement of MOS devices. Can some body suggest the possible cause
of such a low value. ideally it should be close to 3.8 or 3.9

Are there ways to improve the dielectric costant of SiO2 grown on Si by thermal
oxidation? I mean how can one grow good quality oxide on Si and are there any
effects of flow rate of oxygen being used?

Thanks in advance,

regards,
Amol Kumar Singh




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