Marie,

        My experience is that pure CF4 RIE is enough to etch a-SiNx:H with
very good anisotropy. You can't use photoresist as mask, Cr should be
good.

Yours sincerely,

Isaac Chan

Ph.D. Candidate
Dept. Electrical & Computer Engineering
University of Waterloo
200 University Ave. W
Waterloo, Ontario, N2L 3G1, Canada
Tel: (519) 888-4567, ext. 6014
[email protected]
http://www.ece.uwaterloo.ca/~a-sidic
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My experience is on a-Si:H TFT design and semiconductor processing:
http://resumes.hotjobs.com/iwchan2004/processengineer6yr
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On Wed, 10 Nov 2004, Tripp, Marie Kathleen wrote:

> Hello,  I am trying to etch through PECVD Silicon Nitride (nitride rich) that
has carbon nanotubes (CNTs) underneath the layer.  I would like to etch to
expose the CNTs.  I am looking for a dry etching, RIE or ICP, chemistry that
will etch the silicon nitride but not damage the CNTs.  Anything with oxygen is
immediately out of the picture because it will damage the CNTs once they are
exposed.  Can anyone recommend any other chemistry combinations to etch silicon
nitride?  I would like to have as straight of side walls as possible.    Thanks,
Marie
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