Hi,

I am looking for an end point detection method for a reactive ion beam
etching process.  In the process, we have a photoresist mask atop a
SiO2/Hf02 multilayer stack.  We are trying to transfer etch the photoresist
pattern into the SiO2 top layer, but stopping the process once we reach the
HfO2 underlying layer.


Would you recommend a technology to try.

Many thanks,
The ion beam is made up of Ar, O2, and CHF3 plasma.

Hoang Nguyen
Laser Scientist
Lawrence Livermore National Laboratory
hnguyen@llnl.gov
408.623.9456