Respected members,

1. I want to etch (100) double side polished  270 um
2" si wafer to realise a mems structure which would
take approx 35 to 40 hours of KOH etching at 44%
concentration and 50'C as per intellisuite simulation.
i want to do it with Si3N4 mask. i also want to
deposit Al or Au/Cr metal on the released structure
before or after the etching for which I am not able to
decide on the process steps. Facilities available with
us include only RF magnetron sputtering for Si3N4, wet
and RIE etching of Si3N4, metal evaporation deposition
unit and KOH wet etching unit.

2. Can anyone guide me on the process steps and
comment please.


                    mohan

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