It seems to me that your step coverage is too good on your deposition and that
there isn't any exposed PR to etch.  If this is the case the PR stripper would
not be much help.


-----Original Message-----
From: Li Wang 
To: mems-talk@memsnet.org
Date: Mon, 10 Jan 2005 21:18:42 -0500
Subject: [mems-talk] lift-off

Dear colleague,

I tried to make Ni pattern with lift-off. I used AC for pretty long
time (30 min, 100W, 20 mT). After I immersed the wafer into aceton,
the PR can not be washed away even with Ultrasonic. The PR is
obviously still there because I can see patterns on the PR layer. Can
I use PR stripper instead of aceton? Is stripper compatible with Ni?
I really appreciate if you can share you experience with me. Thank you
very much for help in advance.

Lee
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