Microposit S1818 at around 4000-6000 rpm does the Job for a mixed SF6
C4F8 process. Good baking lowers teh etchrate of the resist. You can
remove the resist by aceton and subsequent O2 plasma.

good luck!

Karin

Guiti Zolfagharkhani schrieb:

> I need to do RIE for at least 3 minutes to etch through the Si. Does
> anybody know about a photoresist that can be used as a mask in RIE ?I also
> need to know how to remove the photoresist after RIE process.