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MEMSnet Home: MEMS-Talk: TaN thin film as Barrier for Copper diffusion
TaN thin film as Barrier for Copper diffusion
2005-05-02
PATEL JITENDRA
2005-05-02
Kirt Williams
2005-05-03
Niv
2005-05-02
vishwanath sai
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Isaac Wing Tak Chan
TaN thin film as Barrier for Copper diffusion
Kirt Williams
2005-05-02
One way of testing for interactions of any two material is to measure the
sheet resistance (e.g., with four-point probe)
before and after annealing. If there is a change, usually an increase in
sheet resistance, it is probably due to an interaction.
(Note that it is also possible for the sheet resistance to decrease due to
annealing.)
    --Kirt Williams

----- Original Message -----
From: "PATEL JITENDRA" 
Subject: [mems-talk] TaN thin film as Barrier for Copper diffusion

I am using a TaN thin film as a barrier to protect my wafer against
Copper diffusion. I was wondering if anyone has any information
regarding way to test my thin film. My annealing temperature is 350 C.
Please email me any papers, or any documents you have at
[email protected]. Thanks in advance for your help....

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