Dear All,

I want to etch 450 um thick wafer with 20 micron hole in STS DRIE
process.  Which kind of mask i should use ? I have not good results
with 10 um thick AZ9260 photoresist mask.

Will some one tell me what is the selectivity of Photoresist to Si,
SiO2 to Si and Si3N4 to Si in DRIE process.

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Thanks,
Pradeep Dixit
Research Student,
Micromachine Center,
NTU Singapore - 639669