Hi everyone,
I would to control the generate a tensile stress in a monocrystalline
silicon layer (400nm thick) by implanting boron. However I could not
find the relationship between the concentration of B and the amplitude
of the resulting stress. Here are my questions:
1. Which concentration of B is necessary to reach a tensile stress of 10
MPa ?
2. Do you recommand ionic implantation or diffusion? I think ionic
implantation is better for a good homogeneity of dopants in the whole
thickness.
3. What do you recommand for the thermal treatment following implantation?

That is a lot of questions, sorry... Your help will be much helpful and
appreciated.
Regards,
Vinzoo Calif