Hi,

10 um thick AZ9260 softbake at 110 degree for 4 mins will work well up
to 400 um thick Si etch.

Thanks,
Pradeep

On 5/20/05, Stephan Biber  wrote:
> We want to use the "Bosch-process" for DRIE of silicon structures. Does
> anyone know which photoresist is good to provide very high selectivity
> to the DRIE process? We want to etch more than 300µm deep with only one
> photomask! What is the right resist for this application?