Dear mems.
these day, i have one problem.
i don't know exactly how can i etch Si wafer(100, p-type) by RIE
i can use O2 and CHF3 for plasma gases.
i want to know what is the gases ratio between O2 and CHF3
(i think... O2:CHF3 = 15:30 sccm)
and etch rate(at 200Watt).
please reply to me as soon as possible.
thank you for reading this mail.
bye.