Dear all,

Can anyone tell me whether buffered HF(10:1) attack ITO? I am trying to
passivate ITO electrode on a glass substrate but need to expose a small
active area and then bond to PDMS.
Can anyone suggest a good way to do this? I am thinking of the
following:
1) spin on glass(SOG), cure and then etch away the SOG over the needed
ITO part using BOE, which lead to  the question whether the BOE attacks
ITO?
2) PECVD SiO2, and then use Photoresist as mask to etch the part that
need to expose, anyone knows any process which has a good selectvity of
SiO2 over ITO?
3) sputter SiO2 using lift off process, cover the active area ITO with
Photoresist, and sputter coat the all the other portion.
3) should be the easiest way to do it, but we do not have a sputtering
system yet, 2) is not ready either.
So I have to try 1) first, need to know any experience of BOE and ITO.

Thanks!
Yuanfang Gao
ECE Dept.
University of Missouri-Columbia