Hi,

Im using 5214E in image reversal mode. below is my process

On Si wafers (BOE, Acetone, IPA clean)
spin: 2000rpm (2 um)
soft bake: 110C for 1m30s
expose for 10.4 sec at 8.7 mW/cm2 (i-line)
Reverse bake: 118-120C for 1m
flood expose: 90 sec same lamp power as above
dev: MIF-327 or AZ 400K (1:4) for 1m

After i develop, my resist doesnt seem to have a straight edge. the walls are
really rugged. the expiration date on the resist is 2003 march. is that an issue
or do i have to correct my process. or is it the surface preparation of my
wafer. is the dehydration bake of Si wafer before process that critical. The
resist development seems to be better in case of normal positive exposure.
any thoughts, ideas are much appreciated.

thanks,
krishna