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MEMSnet Home: MEMS-Talk: Contact angle of Silicon and SiO2
Contact angle of Silicon and SiO2
2005-12-02
Pradeep Dixit
2005-12-05
Kirt Williams
Argon plasma for gold etching
2005-12-07
Richard Chang
2005-12-08
David Nemeth
Contact angle of Silicon and SiO2
Kirt Williams
2005-12-05
After cleaning in Piranha (H2SO4 + H2O2 at 120 C), I measured contact angles
of 0 deg for samples of SiO2 and Si3N4 deposited by different means.
The contact angle stayed low for a few days, but gradually increased over
time from contamination in the atmosphere while stored in a standard wafer
shipping container.
    --Kirt Williams

----- Original Message -----
From: "Pradeep Dixit" 
To: "General MEMS discussion" 
Sent: Friday, December 02, 2005 9:12 AM
Subject: [mems-talk] Contact angle of Silicon and SiO2

> Hi all,
>
> Can any one let me know what is the normal contact angle of silicon,
thermal
> grown SiO2 and LPCVD Si3N4 layer with water ?
>
> After surface treatment like SC1 and RCA cleaning, how much it can
> be reduced ?
reply
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