Hi Ron,

You can use Shipley's S1800 series or SPR220 series photoresists (PR)
for SiN RIE, however you should use a PR which you can coat at least as
thick as your SiN layer. We were using S1813 @ 1.3 um coating to etch
0.3 um thick SiN. Also if you are trying to obtain small feature size
such as 1 um, be careful about the PR rounding. These PRs loose their
aspect ratios under SiN RIE process.

Please let me know if you have any questions.

Regards,

Mehmet

>
>Message: 2
>Date: Wed,  1 Feb 2006 15:21:19 -0500
>From: Ron Linklater 
>Subject: [mems-talk] RIE of SiN
>To: [email protected]
>Message-ID: <[email protected]>
>Content-Type: text/plain; charset=US-ASCII
>
>I am looking for some advice on reactive ion etching of silicon nitride.
>
>Particularly, which photoresists would be suitable masks for RIE of a
>silicon nitride layer over a Si wafer?
>
>I am also looking for a RIE recipe to get us started.  We have SF6 and
>CF4 gas available.
>
>We'd like to then wet etch the Si wafer using the SiN as a hard mark.