Dear MEMS Community,
1) I would like to have some input on the literature
available for fabricating high range MEMS Pressure
sensors (0 to 400 bar and even more).

2) In a general sense, for pressure sensor membranes,
in the electrochemical etch stop technique used for
fabricating desired thickness membranes in Si (100)
wafers, do they use epi wafers or do they implant the
regular Si (100) wafer surface to a high depth so as
to get the desired membrane thickness after etching?

3) We have an implanter whose operation is of the
range: 200KeV, 600 micro Amp, P & As solid sources,
P/B/As gas sources, maximum 10e15 atoms/cm square. Can
this be used for MEMS pressure sensor fabrication
(high range 0 to 100 bar, 400 bar etc)?

Your inputs will be highyl appreciated.

thanks,
Srikoundinya P.
OSD-M
SITAR
Bangalore, India