A MEMS Clearinghouse® and information portal
for the MEMS and Nanotechnology community
RegisterSign-In
MEMSnet Home About Us What is MEMS? Beginner's Guide Discussion Groups Advertise Here
News
MEMSnet Home: MEMS-Talk: Thermal Growth silicon dioxide
Thermal Growth silicon dioxide
2006-03-08
Hui Han
2006-03-08
Shay Kaplan
2006-03-09
Martin J Prest
2006-03-09
Leo Petrossian
2006-03-10
Roger Brennan
Thermal Growth silicon dioxide
Leo Petrossian
2006-03-09
Hui,

1.The standard text book model which governs the oxidation of silicon is
known as the Deal-Grove model and can be found in hundreds of books or on
the web, you can just search 'Deal-Grove Model' on Google.

2. The DG model is good for predicting oxidation for perfect furnace but not
exact, best thing to do is try and get furnace data over the passed 6months
- 1 year for your particular furnace tube and fit the data to the DG model
and extract the constants. That is probably the best way to get an accurate
estimate of oxidation time / thickness.

Good Luck,
Leo

Shay's description of a wetox recipe


On 3/9/06, Martin J Prest  wrote:
>
> For oxide growth rate, see this:
>
> http://ee.byu.edu/cleanroom/OxideThickCalc.phtml
>
> Select 'wet' for steam oxidation.
>
> I'm not an expert in this, but I guess wafers should be loaded and removed
> in a nitrogen atmosphere.
reply
Events
Glossary
Materials
Links
MEMS-talk
Terms of Use | Contact Us | Search
MEMS Exchange
MEMS Industry Group
Coventor
Harrick Plasma
Tanner EDA
Mentor Graphics Corporation
Process Variations in Microsystems Manufacturing
University Wafer
Harrick Plasma, Inc.